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Updated: Aug 20, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Low-power multilevel resistive switching inβ-Ga2O3based RRAM devices

Ravi Teja Velpula1, Barsha Jain1, Hieu Pham Trung Nguyen1

  • 1Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, NJ, 07102, United States of America.

Nanotechnology
|November 18, 2022
PubMed

Keywords:
Ga2O3RRAMmultilevel resistive switching

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