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High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

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Quantum Emitters in Hexagonal Boron Nitride.

Igor Aharonovich^1,2, Jean-Philippe Tetienne³, Milos Toth^1,2

¹School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.

|November 22, 2022

Summary

This summary is machine-generated.

Hexagonal boron nitride (hBN) offers unique advantages for quantum emitters due to its van der Waals crystal structure. This review highlights hBN

Keywords:

2D materials hexagonal boron nitride nanophotonics quantum emitters

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Published on: October 12, 2019

Area of Science:

Quantum Science and Technology
Materials Science
Solid-State Physics

Background:

Hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal.
Its atomically thin layers offer unique advantages over bulk materials.
hBN hosts promising quantum emitters for various applications.

Purpose of the Study:

To review the unique properties of hBN quantum emitters.
To highlight progress in engineering and integrating hBN emitters with photonic resonators.
To discuss the potential of hBN spin defects for quantum sensing.

Main Methods:

Review of recent scientific literature on hBN quantum emitters.
Focus on engineering and integration strategies.
Discussion of spin defect characterization and applications.

Main Results:

hBN provides a versatile platform for quantum emitters.
Successful integration with scalable photonic resonators is progressing.
Newly discovered spin defects show potential for quantum sensing.

Conclusions:

Hexagonal boron nitride is a leading material for solid-state quantum science.
hBN quantum emitters are advancing toward practical device implementation.
Future prospects in quantum sensing and computing are significant.