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Updated: Aug 20, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Fully rubbery Schottky diode and integrated devices
Seonmin Jang1,2, Hyunseok Shim1,2, Cunjiang Yu1,2,3,4
1Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802, USA.
Abstract:
A fully rubbery stretchable diode, particularly entirely based on stretchy materials, is a crucial device for stretchable integrated electronics in a wide range of applications, ranging from energy to biomedical, to integrated circuits, and to robotics. However, its development has been very nascent. Here, we report a fully rubbery Schottky diode constructed all based on stretchable electronic materials, including a liquid metal cathode, a rubbery semiconductor, and a stretchable anode. The rubbery Schottky diode exhibited a forward current density of 6.99 × 10-3 A/cm2 at 5 V and a rectification ratio of 8.37 × 104 at ±5 V. Stretchy rectifiers and logic gates based on the rubbery Schottky diodes were developed and could retain their electrical performance even under 30% tensile stretching. With the rubbery diodes, fully rubbery integrated electronics, including an active matrix multiplexed tactile sensor and a triboelectric nanogenerator-based power management system, are further demonstrated.
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