Related Experiment Video
Updated: Aug 20, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Electronic transport in quantum-dot-in-perovskite solids
Steven C Erwin1, Alexander L Efros1
1Center for Computational Materials Science, Naval Research Laboratory, Washington, DC 20375, USA. steve.erwin@nrl.navy.mil.
Abstract:
We investigate theoretically the band transport of electrons and holes in a "quantum-dot-in-perovskite" solid, a periodic array of semiconductor nanocrystal quantum dots embedded in a matrix of lead halide perovskite. For concreteness we focus on PbS quantum dots passivated by inorganic halogen ligands and embedded in a matrix of CsPbI3. We find that the halogen ligands play a decisive role in determining the band offset between the dot and matrix and may therefore provide a straightforward way to control transport experimentally. The model and analysis developed here may readily be generalized to analyze band transport in a broader class of dot-in-solid materials.
Related Concept Videos
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Types of Semiconductors
P-N junction
Drift Velocity

