Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Cascaded Op Amps01:16

Cascaded Op Amps

697
Operational amplifiers (op-amps) are versatile electronic components that can be interconnected in a cascade - one after another in a linear sequence. This cascading is possible due to their infinite input resistance and zero output resistance, allowing them to maintain their input-output relationships even when connected in series.
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
697
MOSFET Amplifiers01:17

MOSFET Amplifiers

214
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
214
BJT Amplifiers01:14

BJT Amplifiers

562
Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
562
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

675
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
675
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

905
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
905
Maximum Power Transfer01:16

Maximum Power Transfer

338
Numerous practical applications within engineering disciplines, such as telecommunications, necessitate optimizing power delivery to a connected load. This pursuit, however, entails inherent internal losses, which can either equal or exceed the power supplied to the load. The Thevenin equivalent circuit is helpful in finding the maximum power a linear circuit can deliver to a load. It is assumed in this context that the load resistance can be adjusted.
By substituting the entire circuit with...
338

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology.

Sensors (Basel, Switzerland)·2023
Same author

An Efficient 24-30 GHz GaN-on-Si Driver Amplifier Using Synthesized Matching Networks.

Micromachines·2023
Same author

Analysis of expression and prognostic significance of vimentin and the response to temozolomide in glioma patients.

Tumour biology : the journal of the International Society for Oncodevelopmental Biology and Medicine·2016
Same author

Missing Messages of Clinical Pharmacologic Survey on Inotropic Drug Use in Neonatal Critical Care.

Pediatric critical care medicine : a journal of the Society of Critical Care Medicine and the World Federation of Pediatric Intensive and Critical Care Societies·2016
Same author

Activin pathway enhances colorectal cancer stem cell self-renew and tumor progression.

Biochemical and biophysical research communications·2016
Same author

Clinical outcome of endoscopic covered metal stenting for resolution of benign biliary stricture: Systematic review and meta-analysis.

Digestive endoscopy : official journal of the Japan Gastroenterological Endoscopy Society·2016

Related Experiment Video

Updated: Aug 20, 2025

A Polymer-based Piezoelectric Vibration Energy Harvester with a 3D Meshed-Core Structure
09:51

A Polymer-based Piezoelectric Vibration Energy Harvester with a 3D Meshed-Core Structure

Published on: February 20, 2019

25.5K

Multi-Band Power Amplifier Module with Back-Off Efficiency Improvement using Ultra-Compact 3D Vertical Stack

Zhihao Zhang1, Jing Li2, Lin Peng1

  • 1School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China.

Micromachines
|November 24, 2022
PubMed
Summary

This study introduces a compact multi-mode multi-band power amplifier module (PAM) using hybrid technologies and a 3D package. It achieves high efficiency and linearity across multiple frequency bands and power modes.

Keywords:
3D vertical stackhigh efficiencyhybrid bulk CMOS/GaAs HBT/SOIminiaturizationmulti-mode multi-bandpower amplifier module (PAM)

More Related Videos

Fabrication and Characterization of Superconducting Resonators
10:26

Fabrication and Characterization of Superconducting Resonators

Published on: May 21, 2016

11.4K
Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.2K

Related Experiment Videos

Last Updated: Aug 20, 2025

A Polymer-based Piezoelectric Vibration Energy Harvester with a 3D Meshed-Core Structure
09:51

A Polymer-based Piezoelectric Vibration Energy Harvester with a 3D Meshed-Core Structure

Published on: February 20, 2019

25.5K
Fabrication and Characterization of Superconducting Resonators
10:26

Fabrication and Characterization of Superconducting Resonators

Published on: May 21, 2016

11.4K
Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.2K

Area of Science:

  • Electrical Engineering
  • Materials Science
  • Semiconductor Devices

Background:

  • Integrated power amplifier modules (PAMs) are crucial for modern wireless communication systems.
  • Achieving high efficiency, linearity, and miniaturization simultaneously presents significant design challenges.

Purpose of the Study:

  • To propose and demonstrate a highly integrated multi-mode multi-band (MMMB) power amplifier module (PAM).
  • To achieve efficient and linear performance across low and high frequency bands using hybrid technologies and advanced packaging.

Main Methods:

  • Utilized hybrid bulk complementary metal oxide semiconductor (CMOS), gallium arsenide (GaAs) heterojunction bipolar transistor (HBT), and silicon-on-insulator (SOI) technologies.
  • Implemented a parallel dual-chain power amplifier (PA) strategy for distinct low-power mode (LPM) and high-power mode (HPM) operations.
  • Employed a broadband two-section low-pass output matching network and a 3D die stack multi-chip module (MCM) packaging structure.

Main Results:

  • Achieved power gains of 26.1-27 dB and power added efficiencies (PAEs) of 38-38.4% in high-power mode for the low band.
  • Demonstrated power gains of 15.9-17.5 dB and PAEs of 12.3-12.8% in low-power mode for the high band.
  • The fabricated PAM covers five frequency bands, operates in two power modes, and occupies a compact 5 × 3.5 mm² area.

Conclusions:

  • The developed MMMB PAM successfully integrates multiple technologies and a 3D MCM package, offering excellent RF performance.
  • This work represents the first demonstration of a MMMB PAM with an ultra-compact 3D vertical stack MCM package exhibiting favorable RF characteristics.