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An Efficient 24-30 GHz GaN-on-Si Driver Amplifier Using Synthesized Matching Networks.

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This study introduces a compact Gallium Nitride (GaN) microwave monolithic integrated circuit driver amplifier (MMIC DA) for 5G millimeter-wave applications, achieving high output power and efficiency.

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5G new radio (NR)GaN HEMTbroadband driver amplifierhigh efficiencyload-pullnetwork synthesis

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Area of Science:

  • Electrical Engineering
  • Materials Science

Background:

  • 5G millimeter-wave communication demands high-performance power amplifiers.
  • Compact and efficient driver amplifiers (DAs) are crucial for these systems.

Purpose of the Study:

  • To design and demonstrate a broadband GaN MMIC DA for 5G millimeter-wave frequencies.
  • To achieve high output power, gain, and power-added efficiency in a compact form factor.

Main Methods:

  • Utilized simplified load-pull procedures and small-signal simulations to determine optimal impedance matching.
  • Employed de-embedding, theoretical analysis, and simulation fitting to model device nonlinearities and input impedance.
  • Applied Chebyshev impedance transformer principles and single-frequency equivalence for matching network synthesis.

Main Results:

  • The two-stage GaN MMIC DA operates across 24-30 GHz with dimensions of 1.65 mm × 0.78 mm.
  • Achieved up to 31.1 dBm saturated output power (Psat) with <1 dB fluctuation.
  • Demonstrated a small-signal gain of 19.3 ± 1 dB and peak power-added efficiency (PAE) of 39.8%.

Conclusions:

  • The developed GaN MMIC DA meets the stringent requirements for 5G millimeter-wave communication.
  • The design methodology effectively integrates device parasitic parameters for optimal performance.
  • The compact size and high performance make it suitable for next-generation wireless systems.