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New Radio Frequency Microelectromechanical Systems (RF-MEMS) switch designs using double-diagonal (DDG) beam suspensions reduce membrane deformation and improve performance. These novel configurations offer enhanced stiffness and release force for advanced RF applications.

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Area of Science:

  • Electrical Engineering
  • Materials Science
  • Mechanical Engineering

Background:

  • Residual fabrication stresses in microelectromechanical systems (MEMS) can cause undesirable membrane deformation.
  • Optimizing suspension designs is crucial for improving the performance and reliability of Radio Frequency MEMS (RF-MEMS) switches.

Purpose of the Study:

  • To propose and optimize new suspended-membrane double-ohmic-contact RF-MEMS switch configurations.
  • To minimize membrane deformation caused by residual stresses using double-diagonal (DDG) beam suspensions.
  • To enhance mechanical properties like stiffness and release force compared to existing designs.

Main Methods:

  • Design and optimization of DDG beam suspensions with two or three anchoring points.
  • Integration of devices into coplanar-waveguide transmission structures.
  • Fabrication using an eight-mask surface-micro-machining process on high-resistivity silicon.
  • Characterization of RF-MEMS switch behavior via S-parameter measurements in ON and OFF states.
  • Validation through mechanical 3D and electromagnetic 2.5D simulations.

Main Results:

  • DDG suspensions exhibited smaller mechanical deformation and higher stiffness.
  • Measured pull-in voltages ranged from 49.5 V to 76.5 V, depending on configuration and window presence.
  • Achieved ON-state insertion loss better than 0.7 dB and OFF-state isolation greater than 31 dB up to 20 GHz.
  • Results showed good agreement with both mechanical and electromagnetic simulations.

Conclusions:

  • The proposed DDG suspended-membrane configurations effectively minimize deformation due to residual stresses.
  • These new designs offer improved mechanical properties and RF performance (insertion loss, isolation) for RF-MEMS switches.
  • The findings are well-supported by simulations, indicating the viability of these optimized switch designs.