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Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
Published on: February 4, 2018
Discussion and Demonstration of RF-MEMS Attenuators Design Concepts and Modules for Advanced Beamforming in the
Girolamo Tagliapietra1, Flavio Giacomozzi1, Massimiliano Michelini1
1Center for Sensors and Devices (SD), Fondazione Bruno Kessler (FBK), 38123 Trento, Italy.
Abstract:
In this paper, different concepts of reconfigurable RF-MEMS attenuators for beamforming applications are proposed and critically assessed. Capitalizing on the previous part of this work, the 1-bit attenuation modules featuring series and shunt resistors and low-voltage membranes (7-9 V) are employed to develop a 3-bit attenuator for fine-tuning attenuations (<-10 dB) in the 24.25-27.5 GHz range. More substantial attenuation levels are investigated using fabricated samples of coplanar waveguide (CPW) sections equipped with Pi-shaped resistors aiming at attenuations of -15, -30, and -45 dB. The remarkable electrical features of such configurations, showing flat attenuation curves and limited return losses, and the investigation of a switched-line attenuator design based on them led to the final proposed concept of a low-voltage 24-state attenuator. Such a simulated device combines the Pi-shaped resistors for substantial attenuations with the 3-bit design for fine-tuning operations, showing a maximum attenuation level of nearly -50 dB while maintaining steadily flat attenuation levels and limited return losses (<-11 dB) along the frequency band of interest.
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