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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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Diode: Forward bias01:20

Diode: Forward bias

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In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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The Ideal Diode01:15

The Ideal Diode

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A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...
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P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
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Etch and Print: Graphene-Based Diodes for Silicon Technology.

Alessandro Grillo1, Zixing Peng1, Aniello Pelella2

  • 1Department of Chemistry, University of Manchester, ManchesterM13 9PL, United Kingdom.

ACS Nano
|December 8, 2022
PubMed
Summary

We developed a cost-effective inkjet printing method for graphene-silicon rectifying devices. These printed devices exhibit excellent performance, paving the way for scalable electronic and optoelectronic applications.

Keywords:
Schottky diodesback-end-of-line processgraphene−silicon junctionsinkjet printingphotodiodes

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Area of Science:

  • Semiconductor technology
  • Materials science
  • Nanotechnology

Background:

  • Graphene-silicon junctions are crucial for next-generation electronic and optoelectronic devices.
  • Current graphene integration methods are expensive, time-consuming, and hinder large-scale fabrication.
  • Challenges in industrial implementation limit the widespread adoption of graphene-integrated semiconductors.

Purpose of the Study:

  • To develop a simple, cost-effective fabrication technique for graphene-silicon rectifying devices.
  • To demonstrate the feasibility of inkjet printing for creating these devices.
  • To assess the performance and applicability of the printed devices.

Main Methods:

  • Utilized inkjet printing for fabricating graphene-silicon rectifying devices.
  • Investigated the electrical and photovoltaic properties of the printed devices.
  • Demonstrated large-area pixeled photodetectors and compatibility with back-end-of-line processes.

Main Results:

  • Achieved an ON/OFF ratio exceeding 3 orders of magnitude for the printed diodes.
  • Observed a significant photovoltaic effect with a fill factor of approximately 40% and photocurrent efficiency of around 2%.
  • Successfully fabricated large-area pixeled photodetectors compatible with industrial fabrication.

Conclusions:

  • Inkjet printing offers a scalable and cost-effective method for producing graphene-silicon rectifying devices.
  • The printed devices demonstrate promising performance for both electronic and optoelectronic applications.
  • This technique facilitates the industrial implementation of graphene-integrated semiconductor technology.