p-ZnO/n-ZnMgO Nanoparticle-Based Heterojunction UV Light-Emitting Diodes

Heterojunction light-emitting diodes (LEDs), based on p-type ZnO and n-type ZnMgO nanoparticles, have been demonstrated. ZnMgO nanoparticles were prepared by the thermal diffusion of Mg onto ZnO nanoparticles. p-ZnO/GZO homostructure LEDs and p-ZnO/n-ZnMgO/GZO heterostructure LEDs have been fabricated using ZnO and ZnMgO nanoparticles. By comparing the characteristic results of these diodes, it can be seen that LEDs with the p-ZnO/n-ZnMgO/GZO structure showed better I-V characteristics with a lower current density leakage than those with the p-ZnO/GZO LED structure. Moreover, the emission intensity was improved by adding the ZnMgO NP layer to the LEDs. These results show that the ZnMgO NP layer acts as a hetero-barrier layer that suppresses the diffusion of holes into the n-type layer and confines holes to the p-type layer.