Large-Scale MoS₂ Pixel Array for Imaging Sensor.

Area of Science:

• Materials Science
• Nanotechnology
• Optoelectronics

Background:

• Two-dimensional molybdenum disulfide (MoS2) is crucial for optoelectronic devices.
• Mechanical exfoliation yields micro-scale MoS2, limiting industrial scalability.
• Wafer-scale MoS2 growth is advancing, but uniform large-area devices remain scarce.

Purpose of the Study:

• To develop a large-scale, uniform MoS2-based image sensor.
• To demonstrate the potential of chemical vapor deposition (CVD) grown MoS2 for pixel arrays.
• To achieve high photoresponsivity exceeding traditional CMOS sensors.

Main Methods:

• Fabrication of a 12x12 pixel array image sensor on a 2 cm x 2 cm monolayer MoS2 film.
• Growth of MoS2 film using chemical vapor deposition (CVD).
• Characterization of photoelectric properties and uniformity across the array.

Main Results:

• Achieved a high photoresponsivity of 364 AW^-1 due to the photogating effect from trap states.
• Demonstrated highly uniform photoelectric properties across the 12x12 pixel array.
• Successfully captured concatenated images, validating the sensor's imaging capability.

Conclusions:

• Wafer-scale CVD-grown MoS2 is suitable for fabricating uniform, large-area optoelectronic devices.
• The developed MoS2 image sensor exhibits superior photoresponsivity compared to conventional CMOS sensors.
• This work highlights the significant potential of 2D MoS2 for future optoelectrical applications and imaging systems.