Large-Scale MoS₂ Pixel Array for Imaging Sensor

Two-dimensional molybdenum disulfide (MoS₂) has been extensively investigated in the field of optoelectronic devices. However, most reported MoS₂ phototransistors are fabricated using the mechanical exfoliation method to obtain micro-scale MoS₂ flakes, which is laboratory- feasible but not practical for the future industrial fabrication of large-scale pixel arrays. Recently, wafer-scale MoS₂ growth has been rapidly developed, but few results of uniform large-scale photoelectric devices were reported. Here, we designed a 12 × 12 pixels pixel array image sensor fabricated on a 2 cm × 2 cm monolayer MoS₂ film grown by chemical vapor deposition (CVD). The photogating effect induced by the formation of trap states ensures a high photoresponsivity of 364 AW^-1, which is considerably superior to traditional CMOS sensors (≈0.1 AW^-1). Experimental results also show highly uniform photoelectric properties in this array. Finally, the concatenated image obtained by laser lighting stencil and photolithography mask demonstrates the promising potential of 2D MoS₂ for future optoelectrical applications.