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Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO2/TaOx/TaN Devices

Minsu Park1, Beomki Jeon1, Jongmin Park1

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|December 11, 2022
PubMed

Keywords:
RRAMhigh-knociceptorthreshold switching

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