A 1-μm-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth

Jia-Qi Chen1,2, Chao Chen1,2,3, Qi Guo4

  • 1State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

Summary

We developed a low-cost, integrated semiconductor laser using femtosecond-apodized fiber Bragg gratings for stable single-frequency output. This technology enables efficient seed sources for various applications, achieving high side-mode suppression ratios.

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