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Related Concept Videos

Characteristics of MOSFET01:17

Characteristics of MOSFET

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
459
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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MOSFET Amplifiers01:17

MOSFET Amplifiers

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The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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MOSFET01:16

MOSFET

541
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
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Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
655
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

441
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
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Design of Precision-Aware Subthreshold-Based MOSFET Voltage Reference.

Shuzheng Mu1, Pak Kwong Chan1

  • 1School of EEE, Nanyang Technological University, Singapore 639798, Singapore.

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|December 11, 2022
PubMed
Summary
This summary is machine-generated.

This study introduces a low-power MOSFET voltage reference circuit, achieving high precision comparable to BJT designs. Its robust temperature insensitivity and low process sensitivity make it ideal for precision analog and sensor applications.

Keywords:
PVT variationbandgap referenceoperational amplifierprocess sensitivitysensor circuittemperature coefficienttemperature compensationvoltage reference

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Area of Science:

  • Electrical Engineering
  • Analog Integrated Circuit Design
  • Semiconductor Devices

Background:

  • Traditional voltage references often use bipolar junction transistors (BJTs), which can have higher power consumption.
  • Subthreshold MOSFET operation offers potential for reduced power but requires careful design for precision.
  • Achieving high precision and temperature stability in voltage references is critical for many electronic systems.

Purpose of the Study:

  • To present a novel precision-aware subthreshold-based MOSFET voltage reference.
  • To demonstrate lower power consumption compared to BJT-based designs while maintaining comparable precision.
  • To evaluate the temperature and process sensitivity of the proposed voltage reference circuit.

Main Methods:

  • Implementation of a subthreshold-based MOSFET voltage reference circuit using TSMC 40 nm technology.
  • Utilizing second-order compensation techniques to enhance temperature stability.
  • Performance characterization including power consumption, temperature coefficient (T.C.), process sensitivity, and power supply rejection (PSR).

Main Results:

  • Achieved a low power consumption of 9.6 μW at a 1.2 V supply voltage.
  • Demonstrated a T.C. of 3.0 ppm/°C (TT corner) and 12.51 ppm/°C (Monte-Carlo, -40 °C to 90 °C), indicating robust temperature insensitivity.
  • Reported process sensitivities of 2.85% (without trimming) and 0.75% (with trimming), with PSR values of 71.65 dB (100 Hz) and 52.54 dB (10 MHz).

Conclusions:

  • The proposed subthreshold-based MOSFET voltage reference offers a compelling alternative to BJT designs due to its lower power consumption and high precision.
  • The circuit exhibits excellent temperature and process stability, making it suitable for demanding applications.
  • The design's simplicity and performance metrics suggest its utility in high-precision sensor and analog circuits.