Uniform self-rectifying resistive random-access memory based on an MXene-TiO₂ Schottky junction

Area of Science:

• Materials Science
• Nanotechnology
• Electrical Engineering

Background:

• Filamentary resistive random-access memory (RRAM) devices suffer from abrupt switching and poor uniformity due to random conductive filament formation.
• Schottky barrier modulation at the electrode/oxide interface offers a pathway to enhance RRAM uniformity by controlling charge trapping/de-trapping.

Purpose of the Study:

• To develop a highly uniform RRAM device utilizing a MXene-TiO2 Schottky junction.
• To investigate the mechanism of resistive switching mediated by defect traps in MXene.

Main Methods:

• Fabrication of a RRAM device based on a MXene-TiO2 Schottky junction.
• Characterization of the device's resistive switching behavior, uniformity, reproducibility, retention, and endurance.
• Analysis of the self-rectifying behavior arising from asymmetric interface barriers.

Main Results:

• The MXene-TiO2 RRAM devices demonstrated excellent uniformity in current on-off ratio and device-to-device reproducibility.
• The devices exhibited robust long-term retention and high endurance reliability.
• A significant self-rectifying behavior with a rectifying ratio of 10^3 was achieved due to distinct interface barrier properties.

Conclusions:

• The MXene-TiO2 Schottky junction effectively modulates the Schottky barrier via defect traps, enabling uniform resistive switching.
• The developed RRAM devices show promising performance characteristics for practical applications.
• The self-rectifying capability highlights the potential of MXene materials in large-scale RRAM integration.