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Updated: Jun 5, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Ruyue Han1,2, Dayu Jia3, Bo Li1,2
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
This study introduces a novel molybdenum disulfide (MoS2) phototransistor that significantly enhances low-contrast target detection for intelligent machine vision systems. The device offers tunable sensitivity and improved noise immunity, outperforming conventional photodetectors.
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