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Updated: Jun 5, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Bioinspired phototransistor with tunable sensitivity for low-contrast target detection
Ruyue Han1,2, Dayu Jia3, Bo Li1,2
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
Abstract:
Accurate recognition of low-contrast targets in complex visual environments is essential for advanced intelligent machine vision systems. Conventional photodetectors often suffer from a weak photoresponse and a linear dependence of photocurrent on light intensity, which restricts their ability to capture low-contrast features and makes them susceptible to noise. Inspired by the adaptive mechanisms of the human visual system, we present a molybdenum disulfide (MoS2) phototransistor with tunable sensitivity, in which the gate stack incorporates a heterostructure diode-composed of O-plasma-treated MoS2 and pristine MoS2-that serves as the photosensitive layer. This configuration enables light-intensity-dependent modulation of the diode's conductance, which dynamically in turn alters the voltage distribution across the gate dielectric and transistor channel, leading to a significant photoresponse. By modulating the gate voltage, the light response range can be finely tuned, maintaining high sensitivity to low-contrast targets while suppressing noise interference. Compared to conventional photodetectors, the proposed device achieves a 1000-fold improvement in sensitivity for low-contrast signal detection and exhibits significantly enhanced noise immunity. The intelligent machine vision system built on this device demonstrates exceptional performance in detecting low-contrast targets, underscoring its promise for next-generation machine vision applications.

