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![The Synthesis of [Sn10SiSiMe334]2- Using a Metastable SnI Halide Solution Synthesized via a Co-condensation Technique](/_next/image?url=https%3A%2F%2Fcloudfront.jove.com%2FCDNSource%2Fteasers%2F54498.jpg&w=3840&q=50)
The Synthesis of [Sn10SiSiMe334]2- Using a Metastable SnI Halide Solution Synthesized via a Co-condensation Technique
Published on: November 28, 2016
Synthesis, Structure, and Thermal Properties of Volatile Group 11 Triazenides as Potential Precursors for Vapor
Rouzbeh Samii1, Anton Fransson1, Pamburayi Mpofu1
1Department of Physics, Chemistry and Biology, Linköping University, Linköping SE58183, Sweden.
Abstract:
Group 11 thin films are desirable as interconnects in microelectronics. Although many M-N-bonded Cu precursors have been explored for vapor deposition, there is currently a lack of suitable Ag and Au derivatives. Herein, we present monovalent Cu, Ag, and Au 1,3-di-tert-butyltriazenides that have potential for use in vapor deposition. Their thermal stability and volatility rival that of current state-of-the-art group 11 precursors with bidentate M-N-bonded ligands. Solution-state thermolysis of these triazenides yielded polycrystalline films of elemental Cu, Ag, and Au. The compounds are therefore highly promising as single-source precursors for vapor deposition of coinage metal films.
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