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Scalable microstructured semiconductor THz pulse sources.

Zoltán Tibai, Gergő Krizsán, György Tóth

    Optics Express
    |December 16, 2022
    PubMed
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    New semiconductor-based terahertz (THz) pulse sources offer scalable, high-energy output. These sources are more feasible than lithium niobate alternatives, promising intense THz pulses for advanced applications.

    Area of Science:

    • Terahertz (THz) science and technology
    • Nonlinear optics
    • Semiconductor device engineering

    Background:

    • Microstructured lithium niobate sources have been explored for high-energy terahertz (THz) applications.
    • Existing THz sources face limitations in scalability, efficiency, and manufacturing feasibility.

    Purpose of the Study:

    • To investigate novel semiconductor-based THz pulse sources.
    • To compare their performance against existing lithium niobate and contact grating sources.
    • To explore scalability in THz energy and device size.

    Main Methods:

    • Utilizing reflective and transmissive nonlinear slab configurations with semiconductors.
    • Employing a 4 mm thick structured gallium phosphide crystal in a transmissive nonlinear echelon slab setup.

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  • Pumping the system with 20 mJ at a 1.8 µm wavelength.

    • Main Results:

    • Achieving scalable THz energy and source size.
    • Outperforming contact grating sources in diffraction and THz generation efficiency.
    • Demonstrating feasibility through easier manufacturing and longer pump wavelengths compared to lithium niobate.
    • Generating intense, nearly single-cycle THz pulses at higher frequencies.

    Conclusions:

    • Semiconductor nonlinear slabs present a feasible and scalable approach for high-energy THz pulse generation.
    • These novel sources offer advantages over existing technologies in efficiency and practicality.
    • The transmissive nonlinear echelon slab configuration shows significant potential for generating intense THz fields.