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Patterning via Optical Saturable Transitions - Fabrication and Characterization
Published on: December 11, 2014
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Optical bistability in PECVD silicon-rich nitride.
Optics Express
|December 16, 2022
Summary
We demonstrate optical bi-stability in silicon-rich nitride (SRN) films for memory and sensing. The study confirms a thermal mechanism for bi-stable switching with a relaxation time of 18.7 microseconds.
Area of Science:
- Materials Science
- Optoelectronics
- Nonlinear Optics
Background:
- Silicon-rich nitride (SRN) films are promising for photonic applications due to their tunable optical properties.
- Optical bi-stability is crucial for developing advanced optical switches and memory devices.
- Understanding the nonlinear optical response of SRN is essential for device optimization.
Purpose of the Study:
- To investigate and demonstrate optical bi-stability in a PECVD-grown SRN film.
- To characterize the thermo-optic coefficients and nonlinear optical properties of the SRN material.
- To explore the potential of SRN for optical switching, memory, and thermal sensing.
Main Methods:
- Fabrication of an SRN ring resonator device using plasma-enhanced chemical vapor deposition (PECVD).
- Characterization of the device's low-power optical response and thermo-optic coefficients.
- Measurement of optically induced resonance shifts, propagation loss, absorption, and relaxation time.
- Demonstration of bi-stable optical switching.
Main Results:
- The SRN film exhibited a refractive index of 3.02 at 1550nm.
- Thermo-optic coefficients were determined to be (2.12 ± 0.125) × 10-4/°C.
- A relaxation time of 18.7 µs was measured, indicating a thermal nonlinearity.
- Successful demonstration of bi-stable optical switching was achieved.
Conclusions:
- The study confirms the presence of significant optical bi-stability in SRN films.
- The observed thermal nonlinearity is suitable for optical switching and memory applications.
- SRN materials offer potential for integrated photonic devices, including thermal sensors.
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