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High-Precision Wafer Bonding Alignment Mark Using Moiré Fringes and Digital Grating.
Jianhan Fan1, Sen Lu2, Jianxiao Zou1,3
1School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Micromachines
|December 23, 2022
Summary
This study introduces a moiré-based mark for precise wafer bonding alignment. The digital grating and moiré fringes enable highly stable and accurate offset calculations for improved semiconductor manufacturing.
Area of Science:
- Semiconductor Manufacturing
- Optical Metrology
- Materials Science
Background:
- Wafer bonding alignment is critical for semiconductor device fabrication.
- Existing alignment methods face challenges with precision and stability.
- Moiré patterns offer potential for high-resolution metrology.
Purpose of the Study:
- To investigate a novel moiré-based mark for high-precision wafer bonding alignment.
- To evaluate the stability and accuracy of moiré fringe generation for alignment.
- To validate the practical applicability of the proposed alignment mark.
Main Methods:
- Superimposing a digital grating onto a moiré-based mark.
- Generating moiré fringes from upper and lower wafer marks.
- Performing phase calculations on moiré fringe images to determine wafer offset.
Main Results:
- The moiré-based mark combined with digital grating achieves high alignment precision.
- Moiré fringe generation demonstrated exceptional stability.
- Experimental validation confirmed the mark's rationality and practicability for wafer alignment.
Conclusions:
- The developed moiré-based mark is effective for high-precision wafer bonding alignment.
- The method offers enhanced stability and accuracy compared to traditional techniques.
- This approach shows significant promise for advanced semiconductor manufacturing processes.
