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Ferroelectric Devices for Content-Addressable Memory.

Mikhail Tarkov1, Fedor Tikhonenko1, Vladimir Popov1

  • 1Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, Russia.

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|December 23, 2022
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Summary
This summary is machine-generated.

In-memory computing reduces energy use by processing data directly in memory. This study explores ferroelectric devices for building advanced content-addressable memory (CAM) and ternary CAM (TCAM) systems.

Keywords:
FTJFeFETcontent-addressable memoryferroelectricmemristor

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Area of Science:

  • Materials Science
  • Computer Engineering
  • Electrical Engineering

Background:

  • In-memory computing offers significant advantages in reducing power consumption and memory access latency by enabling computations directly within memory.
  • Content-addressable memory (CAM) facilitates this by integrating processing capabilities into each memory cell, blurring the lines between storage and computation.
  • Existing CAM technologies face challenges in power efficiency and speed, driving the need for novel material and device solutions.

Purpose of the Study:

  • To investigate the feasibility and challenges of constructing binary and ternary content-addressable memory (CAM and TCAM) using ferroelectric materials.
  • To review the properties and applications of various ferroelectric devices for in-memory computing.

Main Methods:

  • A comprehensive review of ferroelectric materials, including ferroelectric transistors (FeFET), ferroelectric tunnel diodes (FTJ), and ferroelectric memristors.
  • Analysis of the potential of these ferroelectric devices to enable efficient and high-performance CAM and TCAM architectures.

Main Results:

  • Ferroelectric devices show promise for developing novel CAM and TCAM architectures.
  • FeFETs, FTJs, and ferroelectric memristors offer unique characteristics suitable for in-memory computing applications.
  • The integration of ferroelectric properties can potentially overcome limitations of conventional memory technologies.

Conclusions:

  • Ferroelectric-based devices represent a promising pathway for realizing advanced in-memory computing solutions.
  • Further research and development in ferroelectric device engineering are crucial for optimizing CAM and TCAM performance.
  • This work highlights the potential of ferroelectric materials to revolutionize memory and computing paradigms.