Related Experiment Video
Updated: Aug 16, 2025

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
Published on: July 8, 2013
Concept of terahertz waveguide plasmon amplifier based on a metal groove with active graphene
Mikhail Yu Morozov1, Vyacheslav V Popov2
1Kotel'nikov Institute of Radio Engineering and Electronics (Saratov Branch), RAS, 38 Zelenaya Street, Saratov, Russia, 410019. mikhail.yu.morozov@gmail.com.
Abstract:
We propose a concept of terahertz waveguide plasmon amplifier based on a metal groove with active graphene. It is shown that the power amplification factor of the longitudinal-section magnetic (LSM) waveguide plasmon (normalized to its wavelength) near the cut-off frequency of this mode can exceed the amplification factor of the transverse magnetic (TM) plasmon in a layered graphene structure by more than four orders of magnitude for the same frequency. This is caused by the increase of the LSM plasmon wavelength near the cut-off frequency, smaller energy velocity of the LSM mode, and greater energy release from graphene for the LSM plasmon due to stronger lateral confinement of the LSM waveguide plasmon as compared to the TM plasmon in a layered graphene structure. We show that the enhancement of the LSM plasmon amplification factor near the cut-off frequency is a stronger effect than that due to screening of graphene.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
MOSFET Amplifiers

