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n-Type Polymer Semiconductors Based on Dithienylpyrazinediimide.

Suxiang Ma1, Junwei Wang1, Kui Feng1,2

  • 1Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, Guangdong, China.

ACS Applied Materials & Interfaces
|December 26, 2022
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Summary

Researchers developed new n-type organic semiconductors using electron-deficient dithienylpyrazinediimide (TPDI) building blocks. These materials exhibit high electron mobility in organic thin-film transistors, advancing organic electronics.

Keywords:
electron-deficient building blocksimide functionalizationn-type polymersorganic thin-film transistorspyrazine substitution

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Area of Science:

  • Organic electronics
  • Materials science
  • Semiconductor physics

Background:

  • High-performance n-type organic semiconductors are crucial for advanced electronic devices.
  • Developing electron-deficient building blocks with good solubility and minimal steric hindrance is key.
  • Existing dithienylbenzodiimide (TBDI) and fluorinated analogues have limitations.

Purpose of the Study:

  • To synthesize and characterize a novel electron-deficient building block, dithienylpyrazinediimide (TPDI).
  • To develop and evaluate n-type semiconducting polymers based on TPDI.
  • To investigate the impact of pyrazine substitution on polymer properties and performance.

Main Methods:

  • Synthesis of dithienylpyrazinediimide (TPDI) building blocks.
  • Polymerization to create TPDI-based semiconducting polymers.
  • Fabrication and characterization of organic thin-film transistors (OTFTs) to measure electron mobility.

Main Results:

  • TPDI-based polymers exhibit significantly lower-lying lowest unoccupied molecular orbital (LUMO) levels.
  • Improved backbone planarity was observed in TPDI polymers compared to TBDI and TFBDI analogues.
  • High electron mobility up to 0.44 cm² V⁻¹ s⁻¹ was achieved in OTFTs, demonstrating efficient n-type transport.

Conclusions:

  • Dithienylpyrazinediimide (TPDI) is a highly promising building block for high-performance n-type organic semiconductors.
  • Incorporating pyrazine into imide-functionalized (hetero)arenes effectively lowers frontier molecular orbital (FMO) levels.
  • This strategy enables the development of advanced n-type polymers for organic optoelectronic applications.