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Updated: Aug 15, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Srutarshi Banerjee1, Miesher Rodrigues2, Manuel Ballester3
1Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA. srutarshibanerjee2022@u.northwestern.edu.
This study introduces a novel learning-based physical model for room-temperature semiconductor radiation detectors (RTSD). It enables precise characterization of charge transport properties and material defects, even with limited data.
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