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Biasing of Metal-Semiconductor Junctions01:27

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Learning-based physical models of room-temperature semiconductor detectors with reduced data.

Srutarshi Banerjee1, Miesher Rodrigues2, Manuel Ballester3

  • 1Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA. srutarshibanerjee2022@u.northwestern.edu.

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This study introduces a novel learning-based physical model for room-temperature semiconductor radiation detectors (RTSD). It enables precise characterization of charge transport properties and material defects, even with limited data.

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Detector Technology

Background:

  • Room-temperature semiconductor radiation detectors (RTSDs) are crucial for applications in medical imaging, security, and astrophysics.
  • Current characterization methods for RTSDs like CdZnTe and CdTe are labor-intensive, focusing on bulk properties rather than micron-level details.
  • Sub-pixel level 3-D event reconstruction requires detailed understanding of material defects and charge transport properties.

Purpose of the Study:

  • To develop a microscopic, learning-based physical model for RTSDs that overcomes limitations of current characterization techniques.
  • To enable precise material property characterization using limited experimental data.
  • To facilitate sub-pixel level analysis for improved 3-D event reconstruction in pixelated detectors.

Main Methods:

  • A novel learning-based physical model incorporating charge transport with trapping centers was developed.
  • Material properties were learned indirectly from measurable electrode signals and charge distributions during electron-hole pair injection.
  • The RTSD was spatially segmented into voxels, with material properties modeled as learnable parameters within each voxel.

Main Results:

  • The model successfully characterized charge drifts, trapping, detrapping, and recombination coefficients.
  • Characterization was achieved considering multiple trapping centers or a single equivalent trapping center.
  • The model's ability to characterize the RTSD ranged from complete to equivalent, depending on the amount of training data used.

Conclusions:

  • The proposed learning-based physical model offers an efficient and data-driven approach for characterizing RTSDs at a microscopic level.
  • This method significantly reduces the labor intensity associated with traditional characterization techniques.
  • The findings pave the way for enhanced 3-D event reconstruction and improved performance in various RTSD applications.