Study of Dangling Bond States in Magnetron-Sputtered a-Si Thin Films via Parametrization Using a Single UV-Vis-NIR...

While both Urbach tails and dangling bonds are known to be present in a-Si films, the current literature lacks parametrization that simultaneously accounts for both types of defects using only transmittance spectra, reflectance spectra, or spectroscopic ellipsometry. To address this issue, we performed parametrizations of three magnetron-sputtered a-Si thin films deposited on glass substrates at different low pressures of argon gas, using only their measured UV-Vis-NIR transmittance spectra T(λ = [300, 2500] nm) and different dispersion models. We preprocessed T(λ) by suppressing both general and bandpass noise to yield the spectrum T_d(λ). The films were parametrized from T_d(λ) using two versions of the Tauc-Lorentz-Urbach dispersion model and the universal dispersion model (UDM) of Franta. The most accurate parametrization was achieved employing UDM including Urbach tail and three subgap oscillators. JDOS and the dielectric function ε(E) were computed by this UDM, and it was concluded that these three oscillators correspond to electron transitions via two bands of dangling bonds. The respective DOS is similar to the DOS previously reported for a-Si:H, but not to a-Si, indicating a relatively low density of dangling bonds in our a-Si films. Record low parametrization errors are achieved, which confirms the accuracy of these results.