Simulation on a dispersion-managed 4H-SiC on insulator waveguide for infrared supercontinuum generation

Area of Science:

• Materials Science
• Photonics
• Optoelectronics

Background:

• Supercontinuum generation is crucial for various spectroscopic applications.
• Silicon carbide (SiC) is a promising material for photonic devices due to its unique optical properties.

Purpose of the Study:

• To demonstrate infrared supercontinuum generation in 4H-SiC on insulator slab waveguides.
• To investigate the impact of waveguide geometry on dispersion properties.
• To tune the zero-dispersion wavelength for efficient supercontinuum generation.

Main Methods:

• Fabrication of 4H-SiC on insulator slab waveguides.
• Experimental setup for supercontinuum generation using femtosecond laser pulses.
• Analysis of waveguide geometry effects on optical dispersion.

Main Results:

• Achieved broadband infrared supercontinuum generation spanning from approximately 1000 nm to 3560 nm (at 20 dB level).
• Successfully tuned the zero-dispersion wavelength by optimizing waveguide geometry.
• Demonstrated supercontinuum generation using a 1 cm long 4H-SiC waveguide pumped at 1550 nm with 2000 W peak power.

Conclusions:

• 4H-SiC on insulator slab waveguides are effective for generating broadband infrared supercontinuum.
• The results highlight the potential of 4H-SiC as a material for on-chip photonic sources.
• This technology can advance spectroscopic applications in the infrared wavelength range.