A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory

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Updated: Aug 15, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

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Harry Chung1,2, Hyungsoon Shin1,2, Jisun Park2

  • 1Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Republic of Korea.

Materials (Basel, Switzerland)
|January 8, 2023
PubMed

Keywords:
HSPICEmemristive devicememristorresistive random-access memory (RRAM)resistive switching

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