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Updated: Aug 14, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots
Robin T K Schock1, Jonathan Neuwald1, Wolfgang Möckel1
1Institute for Experimental and Applied Physics, University of Regensburg, 93040, Regensburg, Germany.
Abstract:
Molybdenum disulfide nanoribbons and nanotubes are quasi-1D semiconductors with strong spin-orbit interaction, a nanomaterial highly promising for quantum electronic applications. Here, it is demonstrated that a bismuth semimetal layer between the contact metal and this nanomaterial strongly improves the properties of the contacts. Two-point resistances on the order of 100 kΩ are observed at room temperature. At cryogenic temperature, Coulomb blockade is visible. The resulting stability diagrams indicate a marked absence of trap states at the contacts and the corresponding disorder, compared to previous devices that use low-work-function metals as contacts. Single-level quantum transport is observed at temperatures below 100 mK.

