Related Experiment Video
Updated: Aug 14, 2025

Experimental Methods for Spin- and Angle-Resolved Photoemission Spectroscopy Combined with Polarization-Variable Laser
Published on: June 28, 2018
Tunable lattice dynamics and dielectric functions of two-dimensional Bi2O2Se: striking layer and temperature
Yafang Li1, Kai Dai1, Lichen Gao1
1Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China. jzzhang@ee.ecnu.edu.cn.
Abstract:
Two-dimensional (2D) Bi2O2Se semiconductors with a narrow band gap and ultrahigh mobility have been regarded as an emerging candidate for optoelectronic devices, whereas the ambiguous phonon characteristics and optical properties still limit their future applications. Herein, high-quality centimeter-scale 2D Bi2O2Se films are successfully synthesized to disclose the lattice dynamics and dielectric functions under the control of thickness and temperature. It has been demonstrated that the stronger electrostatic Bi-Se interactions result in a stiffened phonon vibration of thicker Bi2O2Se layers. Three excitons (Ea, Eb, and Ec) exhibit significant red shifts with layer stacking. Interestingly, the dielectric properties in the visible-near infrared region (Ea and Eb) are dominated by the combined effect of the joint density of states and mass density, whereas the dielectric properties in the ultraviolet region (Ec) are dominated by the exciton effect. Furthermore, the temperature-sensitivity of the phonon frequency and exciton transition energies is revealed to be layer-dependent. In particular, the optical response of Eb excitons exhibits a prominent dependence on temperature, which indicates a promising optical modulation by temperature in the visible spectrum. This study enriches the knowledge about phonon dynamics and dielectric properties for 2D Bi2O2Se, which provides an essential reference for high-performance related optoelectronic devices.
More Related Videos
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
10:42Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of ChalcogenidoplumbatesII or IV
Published on: December 29, 2016
Related Concept Videos
Trends in Lattice Energy: Ion Size and Charge
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...