Related Experiment Video
Updated: Aug 14, 2025

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
Quantum prospects for hybrid thin-film lithium niobate on silicon photonics
Jeremy C Adcock1, Yunhong Ding2
1Center for Silicon Photonics for Optical Communication, Technical University of Denmark, 2800, Kgs. Lyngby, Denmark. jerad@fotonik.dtu.dk.
Abstract:
Photonics is poised to play a unique role in quantum technology for computation, communications and sensing. Meanwhile, integrated photonic circuits-with their intrinsic phase stability and high-performance, nanoscale components-offer a route to scaling. However, each integrated platform has a unique set of advantages and pitfalls, which can limit their power. So far, the most advanced demonstrations of quantum photonic circuitry has been in silicon photonics. However, thin-film lithium niobate (TFLN) is emerging as a powerful platform with unique capabilities; advances in fabrication have yielded loss metrics competitive with any integrated photonics platform, while its large second-order nonlinearity provides efficient nonlinear processing and ultra-fast modulation. In this short review, we explore the prospects of dynamic quantum circuits-such as multiplexed photon sources and entanglement generation-on hybrid TFLN on silicon (TFLN/Si) photonics and argue that hybrid TFLN/Si photonics may have the capability to deliver the photonic quantum technology of tomorrow.

