Substitutional p-Type Doping in NbS₂ -MoS₂ Lateral Heterostructures Grown by MOCVD

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Monolayer molybdenum disulfide (MoS₂) is a prominent n-type semiconductor within the transition metal dichalcogenide (TMDC) family.
• Developing 2D p-type MoS₂ is critical for complementary logic applications but remains a significant challenge.

Purpose of the Study:

• To synthesize high-quality p-type MoS₂ materials.
• To investigate NbS₂-MoS₂ lateral heterostructures for potential electronic applications.
• To provide a scalable synthesis route for doped TMDC materials.

Main Methods:

• One-step metal-organic chemical vapor deposition (MOCVD) for synthesizing NbS₂-MoS₂ lateral heterostructures.
• Substitutional doping of monolayer MoS₂ with Niobium (Nb).
• Density functional theory (DFT) and quantum transport simulations for band structure analysis.

Main Results:

• Successful synthesis of high-quality NbS₂-MoS₂ lateral heterostructures with p-type MoS₂.
• Achieved a p-type transfer characteristic with a high on/off current ratio of approximately 10⁴.
• Investigated the band structure and interface properties of the heterojunction.

Conclusions:

• The study presents a scalable approach for synthesizing substitutionally doped TMDC materials.
• The developed heterostructures offer promising properties for next-generation nanoelectronics.
• Insights into the 2D metal-semiconductor interface are crucial for advanced device development.