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Fabricating Nanogaps by Nanoskiving
Published on: May 13, 2013
Direct Band Gap AlGaAs Wurtzite Nanowires
Daniele Barettin1, Igor V Shtrom2,3,4, Rodion R Reznik2
1Department of Electronic Engineering, Università degli Studi Niccolò Cusano - Telematica, via don Carlo Gnocchi 3, Rome00166, Italy.
Abstract:
Wurtzite AlGaAs is a technologically promising yet unexplored material. Here we study it both experimentally and numerically. We develop a complete numerical model based on an 8-band method, including electromechanical fields, and calculate the optoelectronic properties of wurtzite AlGaAs nanowires with different Al content. We then compare them with our experimental data. Our results strongly suggest that wurtzite AlGaAs is a direct band gap material. Moreover, we have also numerically obtained the band gap of wurtzite AlAs and the valence band offset between AlAs and GaAs in the wurtzite symmetry.
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