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Perovskite QLED with an external quantum efficiency of over 21% by modulating electronic transport
Tao Fang1, Tiantian Wang1, Xiansheng Li1
1School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China; MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, Nanjing 210094, China.
Abstract:
Perovskite quantum-dot-based light-emitting diodes (QLEDs) are highly promising for future solid-state lightings and high-definition displays due to their excellent color purity. However, their device performance is easily affected by charge accumulation induced luminescence quenching due to imbalanced charge injection in the devices. Here we report green perovskite QLEDs with simultaneously improved efficiency and operational lifetime through balancing the charge injection with the employment of a bilayered electron transport structure. The charge-balanced QLEDs exhibit a color-saturated green emission with a full-width at half-maximum (FWHM) of 18 nm and a peak at 520 nm, a low turn-on voltage of 2.0 V and a champion external quantum efficiency (EQE) of 21.63%, representing one of the most efficient perovskite QLEDs so far. In addition, the devices with modulated charge balance demonstrate a nearly 20-fold improvement in the operational lifetime compared to the control device. Our results demonstrate the great potential of further improving the device performance of perovskite QLEDs toward practical applications in lightings and displays via rational device engineering.
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