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Surface multiferroics in silicon enabled by hole-carrier doping

Xiaoyu Xuan1, Wanlin Guo1, Zhuhua Zhang1

  • 1State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China.

Science Bulletin
|January 20, 2023
PubMed

Keywords:
Ab initio calculationsCarrier dopingElectric dipoleFerromagnetismSi(0 0 1)

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