Related Experiment Video

Updated: Aug 13, 2025

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

9.6K

Low-temperature processed inorganic hole transport layer for efficient and stable mixed Pb-Sn low-bandgap perovskite

Qiaolei Han1, Ying Wei1, Renxing Lin1

  • 1National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China.

Science Bulletin
|January 20, 2023
PubMed
Abstract

No abstract available in PubMed .

More Related Videos

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells08:30

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Published on: March 19, 2017

16.7K
Flash Infrared Annealing for Perovskite Solar Cell Processing05:15

Flash Infrared Annealing for Perovskite Solar Cell Processing

Published on: February 3, 2021

8.0K

Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
600