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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jul 12, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

Stabilizing 1.93-eV ultrawide-bandgap perovskites for efficient triple-junction solar cells.

Wenchi Kong^1,2, Xinrui Han³, Haowen Luo³

¹National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Frontiers Science Center for Critical Earth Material Cycling, Jiangsu Physical Science Research Center, Nanjing University, Nanjing, China. kongwenchi@nju.edu.cn.

Nature Communications

|July 10, 2026

Summary

Researchers enhanced perovskite/perovskite/silicon triple-junction solar cells by stabilizing ultrawide-bandgap perovskites. This breakthrough improves efficiency and stability for next-generation solar energy technologies.

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Last Updated: Jul 12, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

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Published on: September 8, 2017

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Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Published on: February 27, 2017

Area of Science:

Materials Science
Renewable Energy
Photovoltaics

Background:

Monolithic perovskite/perovskite/silicon triple-junction solar cells promise higher efficiencies than two-junction designs.
Phase instability in ultrawide-bandgap perovskites hinders the efficiency and stability of triple-junction solar cells.

Purpose of the Study:

To improve the efficiency and stability of perovskite/perovskite/silicon triple-junction solar cells.
To address the phase instability issue in ultrawide-bandgap perovskites.

Main Methods:

Incorporation of 1,4-phenylenediamine dihydriodide into the 1.93-eV bandgap perovskite to enhance ion migration barriers and suppress phase segregation.
Post-treatment of the perovskite surface using 3-(methylthio)propylamine hydroiodide.

Main Results:

Achieved a certified efficiency of 26.18% for the triple-junction solar cell with an open-circuit voltage of 3.148 V.
Demonstrated remarkable stability, retaining 96% of initial performance after 1500 hours of continuous operation under one-sun illumination.
Significantly increased ion migration barrier and suppressed phase segregation in ultrawide-bandgap perovskites.

Conclusions:

The developed strategies significantly enhance the stability and efficiency of perovskite/perovskite/silicon triple-junction solar cells.
This work represents a notable advancement in achieving stable and high-efficiency perovskite-based solar devices.