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Design of a CMOS Image Sensor with Bi-Directional Gamma-Corrected Digital-Correlated Double Sampling
Jaehee Cho1, Hyunseon Choo1, Suhyeon Lee1
1Department of Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea.
Sensors (Basel, Switzerland)
|January 21, 2023
Summary
This study introduces a 640x480 CMOS image sensor with digital correlated double sampling (CDS) for improved gamma correction. The novel digital-CDS method enhances signal-to-noise ratio (SNR) by over 10%.
Area of Science:
- Electrical Engineering
- Image Sensor Technology
- Semiconductor Devices
Background:
- Analog correlated double sampling (CDS) in CMOS image sensors (CIS) for gamma correction is susceptible to imperfections.
- Existing methods for in-circuit gamma correction face limitations due to analog circuit vulnerabilities.
Purpose of the Study:
- To develop a robust in-circuit bi-directional gamma correction technique for CMOS image sensors.
- To address the limitations of analog CDS by proposing a digital-CDS approach.
Main Methods:
- Implementation of a 640x480 CMOS image sensor (CIS) featuring a novel digital-correlated double sampling (CDS) structure.
- Utilizing a hold-and-go counter for digital-CDS to enable bi-directional gamma correction.
- Integration of a global log-exponential counter and configurable column reset counter for 10-bit resolution.
Main Results:
- Achieved a maximum Signal-to-Noise Ratio (SNR) improvement of 10.41% using the proposed bi-directional gamma-corrected digital-CDS.
- The sensor demonstrated a 10-bit resolution with 8/9-bit configurable column reset counters.
- Fabricated on a 0.11 μm CIS process with a chip area of 5.9 mm × 5.24 mm.
Conclusions:
- The proposed digital-CDS method effectively enables robust bi-directional gamma correction in CIS.
- This advancement leads to significant SNR improvements in image sensor performance.
- The developed sensor offers high resolution and low power consumption (6.3 mW at 16.6 fps).

