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Selective Dual-Ion Modulation in Solid-State Magnetoelectric Heterojunctions for In-Memory Encryption.

Xiaoyu Ye1,2,3, Xiaojian Zhu1,2,3, Huali Yang1,2

  • 1CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.

Small (Weinheim an Der Bergstrasse, Germany)
|January 23, 2023
PubMed
Summary

This study introduces a novel dual-ion device for reconfigurable magnetoresistance, enabling in-memory encryption. This breakthrough advances secure data storage in next-generation electronics.

Keywords:
in-memory encryptionmagnetoresistance symmetrymultifunctional nanodevicesnanoionicsselective dual-ion modulation

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Area of Science:

  • Solid-state physics
  • Materials science
  • Nanotechnology

Background:

  • Nanoionic technologies modulate dielectric properties for nanodevices like memory and computing.
  • Previous research focused on single-ion manipulation, limiting exploration of coupled magnetoelectric effects for multifunctional devices.

Purpose of the Study:

  • To investigate dual-ion modulation on coupled magnetoelectric effects for information devices.
  • To develop a solid-state magnetoelectric heterojunction with reconfigurable magnetoresistance for in-memory encryption.

Main Methods:

  • Fabrication of a Pt/HfO2-x/NiOy/Ni dual-ion solid-state magnetoelectric heterojunction.
  • Selective manipulation of oxygen anions and nickel cations using controlled voltages.
  • Modulation of electrical resistance and interfacial magnetic coupling to alter magnetoresistance symmetry.

Main Results:

  • Demonstrated selective voltage-driven modulation of oxygen anions and nickel cations.
  • Achieved concurrent changes in electrical resistance and interfacial magnetic coupling.
  • Successfully modulated magnetoresistance symmetry for in-memory encryption applications.

Conclusions:

  • The dual-ion device exhibits reconfigurable magnetoresistance for in-memory encryption.
  • This technology offers a simple structure, multistate encryption, reversibility, and nonvolatile modulation.
  • Opens new pathways for compact electronics with integrated information functionalities.