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Femtosecond optical orientation triggering magnetization precession in epitaxial EuO films
Vladimir N Kats1, Leonid A Shelukhin1, Pavel A Usachev1
1Ioffe Institute, 194021 St. Petersburg, Russia. pavlov@mail.ioffe.ru.
Nanoscale
|January 23, 2023
Summary
Ultrafast spin manipulation in EuO-based ferromagnets was achieved using light. This study reveals optical spin orientation as a key mechanism for magnetization precession, paving the way for advanced spintronics.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Optoelectronics
Background:
- Ultrafast magnetization dynamics are crucial for information transfer via spin manipulation.
- Exploring novel materials with efficient ultrafast magnetization mechanisms is essential for advancing spintronics.
- EuO-based ferromagnets offer potential for light-controlled magnetic properties.
Purpose of the Study:
- To investigate the ultrafast light-induced magnetization dynamics in EuO-based ferromagnets.
- To identify the underlying mechanisms responsible for photo-induced magnetization precession.
- To explore the potential applications of these materials in optoelectronics and spintronics.
Main Methods:
- Time-resolved two-colour stroboscopic pump-probe measurements were employed.
- Experiments were conducted on epitaxial films of pristine and Gd-doped EuO.
- Parameters such as temperature, magnetic field, and pump beam polarization helicity were varied.
Main Results:
- Photo-induced magnetization precession was observed in both semiconductor and metallic Gd-doped EuO films.
- The electronic transition 4f75d0 → 4f65d1 was identified as the mechanism triggering collective magnetization precession.
- Comparative studies provided insights into the influence of experimental conditions on the dynamics.
Conclusions:
- Optical spin orientation via specific electronic transitions is a viable mechanism for ultrafast magnetization control in EuO.
- EuO-based ferromagnets demonstrate significant potential for applications in optoelectronics and spintronics.
- The findings contribute to the development of next-generation data storage and processing technologies.
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