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Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material
Lujin Min1,2, Hengxin Tan3, Zhijian Xie4
1Department of Physics, Pennsylvania State University, University Park, PA, USA.
Nature Communications
|January 23, 2023
Summary
Researchers discovered a strong room-temperature nonlinear Hall effect in BaMnSb2, utilizing its unique spin-valley locked Dirac state. This breakthrough enables potential applications in advanced electronic devices and large photocurrent generation.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- The nonlinear Hall effect (NLHE) is a novel phenomenon with significant application potential.
- Strong room-temperature NLHE is crucial for practical device implementation, but remains largely elusive.
- Existing NLHE studies are predominantly low-temperature phenomena, with limited exceptions like surface effects.
Purpose of the Study:
- To investigate the potential of BaMnSb2 to exhibit a strong bulk nonlinear Hall effect at room temperature.
- To explore the underlying physics of spin-valley locked Dirac states in generating bulk NLHE.
- To demonstrate the device functionality of BaMnSb2 for applications like microwave detection.
Main Methods:
- Fabrication of microscale devices using BaMnSb2.
- Electrical transport measurements to characterize the Hall effect.
- Analysis of the transverse Hall voltage response to longitudinal current.
Main Results:
- Observation of a strong bulk nonlinear Hall effect in BaMnSb2 at room temperature.
- Demonstration of a quadratic scaling of transverse Hall voltage with longitudinal current, indicative of an intrinsic NLHE.
- Successful application of the BaMnSb2 nonlinear Hall device in wireless microwave detection and frequency doubling.
Conclusions:
- The spin-valley locked Dirac state in BaMnSb2 effectively generates a strong bulk NLHE at room temperature.
- This work extends the understanding of coupled spin and valley physics from 2D to 3D systems.
- The findings provide a foundation for developing 3D bulk NLHE devices and exploring their applications.
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