Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

P-N junction01:11

P-N junction

599
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
599
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

305
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
305
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

428
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
428
Theories of Dissolution: The Danckwerts' Model and Interfacial Barrier Model01:09

Theories of Dissolution: The Danckwerts' Model and Interfacial Barrier Model

375
Various dissolution theories provide insight into the factors that influence the dissolution rate. Danckwerts' Model suggests that turbulence, rather than a stagnant layer, characterizes the dissolution medium at the solid-liquid interface. In this model, the agitated solvent contains macroscopic packets that move to the interface via eddy currents, facilitating the absorption and delivery of the drug to the bulk solution. The regular replenishment of solvent packets maintains the...
375
Carrier Transport01:21

Carrier Transport

499
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
499
Fermi Level Dynamics01:12

Fermi Level Dynamics

308
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
308

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Stabilizing persistent currents in an atomtronic Josephson junction necklace.

Nature communications·2024
Same author

Fermionic quantum turbulence: Pushing the limits of high-performance computing.

PNAS nexus·2024
Same author

Generation and decay of Higgs mode in a strongly interacting Fermi gas.

Scientific reports·2023
Same author

Dissipative Dynamics of Quantum Vortices in Fermionic Superfluid.

Physical review letters·2023
Same author

Scaling and Diabatic Effects in Quantum Annealing with a D-Wave Device.

Physical review letters·2020
Same author

Suppressed Solitonic Cascade in Spin-Imbalanced Superfluid Fermi Gas.

Physical review letters·2018

Related Experiment Video

Updated: Aug 12, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.7K

Dissipation Mechanisms in Fermionic Josephson Junction.

Gabriel Wlazłowski1,2, Klejdja Xhani3, Marek Tylutki1

  • 1Faculty of Physics, Warsaw University of Technology, Ulica Koszykowa 75, 00-662 Warsaw, Poland.

Physical Review Letters
|January 27, 2023
PubMed
Summary
This summary is machine-generated.

We numerically characterized superfluid ultracold fermionic Josephson junctions, revealing distinct dissipation mechanisms in weak versus strong interactions. Dissipation arises from pair-breaking in weak interactions and quantum vortex emission in strong interactions.

More Related Videos

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

7.8K
Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving
11:21

Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving

Published on: March 30, 2017

7.5K

Related Experiment Videos

Last Updated: Aug 12, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.7K
High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

7.8K
Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving
11:21

Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving

Published on: March 30, 2017

7.5K

Area of Science:

  • Atomic, Molecular, and Optical Physics
  • Condensed Matter Physics
  • Quantum Fluids

Background:

  • Superfluid ultracold fermionic Josephson junctions exhibit complex dynamics.
  • Understanding dissipation mechanisms is crucial for controlling these quantum systems.

Purpose of the Study:

  • To numerically characterize the dominant dynamical regimes in superfluid ultracold fermionic Josephson junctions.
  • To distinguish the physical mechanisms of dissipation in weakly and strongly interacting limits.

Main Methods:

  • Numerical characterization of superfluid ultracold fermionic Josephson junctions.
  • Analysis of dissipation onset and physical mechanisms.

Main Results:

  • Identified distinct dissipation mechanisms in weak and strong interaction regimes.
  • In the strongly interacting regime, dissipation occurs via phase-slippage, quantum vortex emission, and sound waves.
  • In the weakly interacting regime, dissipation primarily arises from pair-breaking mechanisms.

Conclusions:

  • The physical mechanisms of dissipation differ significantly between weakly and strongly interacting fermionic Josephson junctions.
  • Despite differing mechanisms, global dynamics show weak sensitivity to the operating dissipative channel.