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Updated: Aug 12, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

High-Mobility Flexible Transistors with Low-Temperature Solution-Processed Tungsten Dichalcogenides.

Tian Carey¹, Oran Cassidy¹, Kevin Synnatschke¹

¹School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin D02 E8C0, Ireland.

|January 31, 2023

Summary

This summary is machine-generated.

Researchers developed a new method to create high-mobility two-dimensional (2D) flake networks for flexible electronics. These networks, made from tungsten diselenide (WSe2) and tungsten disulfide (WS2), show excellent performance after thousands of bending cycles.

Keywords:

Langmuir−Schaefer deposition electrochemical exfoliation solution processing transistors tungsten dichalcogenides

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Area of Science:

Materials Science
Nanotechnology
Condensed Matter Physics

Background:

Development of high-mobility two-dimensional (2D) materials beyond MoS2 is crucial for advanced electronic applications.
Solution-processed networks are needed for conformable and flexible electronic devices.

Purpose of the Study:

To report electrochemical exfoliation of large-aspect-ratio semiconducting WSe2 and WS2 flakes.
To achieve highly aligned and conformal flake networks using Langmuir-Schaefer coating.
To fabricate and characterize electrochemical transistors from these 2D materials.

Main Methods:

Electrochemical exfoliation of WSe2, WS2, and MoS2.
Langmuir-Schaefer coating for flake network formation.
Fabrication of electrochemical transistors at low processing temperatures (120 °C) without acid treatments.

Main Results:

Achieved average mobilities of 11 cm2 V−1 s−1 (MoS2), 9 cm2 V−1 s−1 (WS2), and 2 cm2 V−1 s−1 (WSe2).
Obtained high current on/off ratios (up to 4.2 × 10^4) and low subthreshold slopes (182 mV/dec).
Demonstrated stable performance of WSe2 transistors on PET after 1000 bending cycles at 1% strain.

Conclusions:

Electrochemical exfoliation and Langmuir-Schaefer coating enable high-quality 2D flake networks.
The developed transistors exhibit excellent performance and power efficiency.
The materials show promise for robust, flexible electronic applications.