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Published on: June 18, 2013
Non-〈111〉-oriented semiconductor nanowires: growth, properties, and applications
Xin Yan1, Yuqing Liu1, Chaofei Zha1,2
1State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China. xyan@bupt.edu.cn.
Abstract:
In recent years, non-〈111〉-oriented semiconductor nanowires have attracted increasing interest in terms of fundamental research and promising applications due to their outstanding crystal quality and distinctive physical properties. Here, a comprehensive overview of recent advances in the study of non-〈111〉-oriented semiconductor nanowires is presented. We start by introducing various growth techniques for obtaining nanowires with certain orientations, for which the growth energetics and kinetics are discussed. Attention is then given to the physical properties of non-〈111〉 nanowires, as predicted by theoretical calculations or demonstrated experimentally. After that, we review the advantages and challenges of non-〈111〉 nanowires as building blocks for electronic and optoelectronic devices. Finally, we discuss the possible challenges and opportunities in the research field of non-〈111〉 semiconductor nanowires.

