Related Experiment Video

Updated: Aug 12, 2025

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids
13:29

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

Published on: August 23, 2012

14.2K

Surface charge-directed borophene-phosphorous nitride nanodot heterojunction supports for enhanced

Manoj Kumar Mohanta1, Mohammad Qureshi1

  • 1Materials science laboratory, Department of Chemistry, Indian Institute of Technology Guwahati, India. mq@iitg.ac.in.

Chemical Communications (Cambridge, England)
|February 1, 2023
PubMed

More Related Videos

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations13:56

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

7.7K
Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

8.9K

Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
599
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
679