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Investigation of Different Oxygen Partial Pressures on MgGa2O4-Resistive Random-Access Memory
Yu-Neng Kao1, Wei-Lun Huang1, Sheng-Po Chang2
1Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan.
ACS Omega
|February 6, 2023
Summary
Optimizing oxygen partial pressure in MgGa2O4-resistive RAMs (RRAMs) significantly enhances resistive switching characteristics. This study reveals potential for nonvolatile memristors and information security applications.
Area of Science:
- Materials Science
- Solid-State Electronics
Background:
- Resistive Random-Access Memory (RRAM) technology is crucial for next-generation data storage.
- Understanding the impact of fabrication parameters on RRAM performance is essential for device optimization.
Purpose of the Study:
- To investigate the effect of oxygen partial pressure on the resistive switching behavior of MgGa2O4-based RRAM.
- To elucidate the switching mechanism and identify potential applications.
Main Methods:
- Fabrication of MgGa2O4 RRAM devices under varying oxygen partial pressures.
- Characterization using X-ray photoelectron spectroscopy (XPS).
- Evaluation of electrical properties including set/reset voltages, endurance, and retention.
Main Results:
- Increasing oxygen ratio gas flow drastically improved MgGa2O4 RRAM characteristics.
- A filament model involving oxygen vacancies and Joule heating explained the switching mechanism and high-resistance state.
- The devices demonstrated good cycling endurance and retention over 10,000 seconds.
Conclusions:
- Optimized fabrication parameters of Al/MgGa2O4/Pt RRAM lead to enhanced performance.
- The RRAM devices show promise for nonvolatile memristors and information security, particularly for physical unclonable functions.
