Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

426
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
426
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

304
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
304

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Exceptional Rare-Earth Half-Heusler Thermoelectrics With Sublattice Softening.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Development of Machine-Learned Interatomic Potentials to Predict Structure, Transport, and Reactivity in Platinum-Based Fuel Cells.

ACS omega·2026
Same author

Detecting the full photoemission cone from laser-based ARPES experiments by leveraging deflector technology.

The Review of scientific instruments·2026
Same author

Strain-induced deterministic moiré superlattices in 2D materials.

Proceedings of the National Academy of Sciences of the United States of America·2026
Same author

On-demand linkage cleavage in two-dimensional conjugated metal-organic frameworks for closed-loop recyclable electronics.

Science advances·2026
Same author

Phonons take control of heat transfer in a metal.

National science review·2026

Related Experiment Video

Updated: Aug 11, 2025

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

7.8K

Topological Metal MoP Nanowire for Interconnect.

Hyeuk Jin Han1,2,3, Sushant Kumar4, Gangtae Jin1,2

  • 1Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT, 06511, USA.

Advanced Materials (Deerfield Beach, Fla.)
|February 6, 2023
PubMed
Summary

Molybdenum phosphide (MoP) nanowires show superior resistivity scaling compared to copper interconnects for advanced integrated circuits. This topological metal offers a promising, stable alternative for future nanoscale electronics.

Keywords:
electron scatteringenergy-efficient computinginterconnectstopological metals

More Related Videos

Iron Nanowire Fabrication by Nano-Porous Anodized Aluminum and its Characterization
07:14

Iron Nanowire Fabrication by Nano-Porous Anodized Aluminum and its Characterization

Published on: October 6, 2019

8.4K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.4K

Related Experiment Videos

Last Updated: Aug 11, 2025

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

7.8K
Iron Nanowire Fabrication by Nano-Porous Anodized Aluminum and its Characterization
07:14

Iron Nanowire Fabrication by Nano-Porous Anodized Aluminum and its Characterization

Published on: October 6, 2019

8.4K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.4K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Copper interconnects face increasing resistance challenges at nanoscale dimensions, hindering integrated circuit downscaling beyond 7nm.
  • Electron scattering at surfaces and grain boundaries significantly increases copper's resistivity at the nanoscale.
  • Topological semimetals offer potential solutions due to protected surface states and reduced electron backscattering.

Purpose of the Study:

  • To investigate the resistivity scaling of topological metal molybdenum phosphide (MoP) nanowires.
  • To compare the performance of MoP nanowires with traditional copper interconnects for nanoscale applications.
  • To evaluate MoP as a potential alternative for overcoming interconnect scaling challenges.

Main Methods:

  • Fabrication and characterization of molybdenum phosphide (MoP) nanowires.
  • Measurement of electrical resistivity and its scaling with cross-sectional area.
  • Assessment of material properties including cohesive energy, oxidation resistance, and thermal conductivity.
  • Comparative analysis against copper and ruthenium interconnects.

Main Results:

  • MoP nanowires exhibit unprecedented resistivity scaling, outperforming nanoscale copper interconnects for cross-sectional areas below 500 nm².
  • MoP demonstrates superior stability against electromigration and surface oxidation compared to copper.
  • The thermal conductivity of MoP is comparable to ruthenium and cobalt.
  • Dimensional scaling of MoP is competitive with barrier/liner and barrier-less ruthenium interconnects.

Conclusions:

  • Molybdenum phosphide (MoP) is a promising alternative material for interconnects in advanced integrated circuits, addressing the limitations of copper.
  • MoP's superior resistivity scaling, stability, and oxidation resistance enable barrier-free designs and continued device miniaturization.
  • MoP offers a viable solution for the critical interconnect scaling challenge beyond the 7nm technology node.