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Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser1,2,3, Regina Dittmann1,2, Georgi Staikov1,2
1Jülich-Aachen Research Alliance Section Fundamentals of Future Information Technology (JARA-FIT) 52425 Jülich (Germany).
Abstract:
This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined..
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