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GeTe2 Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation.

Maria R Konnikova1,2,3, Maxim D Khomenko2, Andrey S Tverjanovich4

  • 1Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, 119991 Moscow, Russia.

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|February 13, 2023
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Summary
This summary is machine-generated.

This study explores germanium telluride (GeTe2) phase change materials for tunable terahertz (THz) devices. Researchers demonstrated dynamic control of THz resonance in GeTe2 metasurfaces via thermal or light-induced crystallization.

Keywords:
germanium ditelluridemetamaterialsoptically active materialsphase change materialterahertz radiationtunable photonics

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Condensed Matter Physics

Background:

  • Phase change materials (PCMs) offer dynamically controllable properties for advanced optical devices.
  • Germanium telluride (GeTe2) is a novel PCM with significant differences in optical characteristics between its amorphous and crystalline states.

Purpose of the Study:

  • To investigate the terahertz (THz) dielectric permittivity and optical properties of GeTe2.
  • To design and demonstrate a tunable THz metasurface using GeTe2 films.
  • To explore methods for dynamic control of the metasurface's THz resonance.

Main Methods:

  • GeTe2 films were prepared using pulsed laser deposition (PLD).
  • THz spectra were analyzed using harmonic oscillator and Drude models.
  • A THz metasurface was fabricated and characterized.
  • Density functional theory (DFT) was employed for modeling.

Main Results:

  • GeTe2 exhibited a remarkable 7-order-of-magnitude difference in conductivity between crystalline and amorphous states.
  • The THz resonance of the GeTe2 metasurface could be tuned dynamically via thermal or light-induced crystallization.
  • Raman spectroscopy at 155 cm-1, assigned to Te-Te stretching, was identified as a control mechanism for the metasurface state.

Conclusions:

  • GeTe2 is a promising PCM for creating dynamically tunable THz metasurfaces.
  • The observed contrast in conductivity and tunable resonance enable novel THz device functionalities.
  • Raman peak intensity at 155 cm-1 provides a viable method for monitoring and controlling the phase state of the metasurface.