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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Related Experiment Video

Updated: Aug 10, 2025

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
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Narrow linewidth electro-optically tuned multi-channel interference widely tunable semiconductor laser.

Kuankuan Wang, Quanan Chen, Chun Jiang

    Optics Express
    |February 14, 2023
    PubMed
    Summary
    This summary is machine-generated.

    This study presents a novel tunable semiconductor laser using multi-channel interference (MCI) and carrier injection. The device achieves a wide tuning range with narrow linewidths, showing promise for optical sensing and communications.

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    Area of Science:

    • Photonics and Optical Engineering
    • Semiconductor Device Physics
    • Laser Technology

    Background:

    • Widely tunable semiconductor lasers are crucial for optical sensing and communications.
    • Existing tunable laser technologies face limitations in tuning range, linewidth, and integration.

    Purpose of the Study:

    • To demonstrate a narrow linewidth, electro-optically tuned, multi-channel interference (MCI) widely tunable semiconductor laser.
    • To evaluate the performance of this laser for potential applications.

    Main Methods:

    • Fabrication of an MCI laser with a common phase section and semiconductor optical amplifier (SOA).
    • Characterization using a mode-shifting and reflection-peak alignment strategy.
    • Packaging the laser into a 16-pin butterfly box.

    Main Results:

    • Achieved a quasi-continuous tuning range of over 48 nm.
    • Maintained side mode suppression ratios (SMSRs) > 40 dB and frequency deviations < ±1 GHz from the ITU-grid.
    • Demonstrated threshold currents < 28 mA, fiber-coupled output power > 20 mW, and power variations < 0.8 dB.
    • Obtained Lorentzian linewidths < 320 kHz across the tuning range.

    Conclusions:

    • The developed MCI laser offers a wide tuning range and narrow linewidth, suitable for carrier injection tuning.
    • The laser's performance metrics indicate significant potential for optical sensing and optical communication systems.