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Updated: Aug 9, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Strain-Induced Plasmon Confinement in Polycrystalline Graphene
Simone Zanotto1, Luca Bonatti2, Maria F Pantano3
1NEST, Istituto Nanoscienze - CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, Pisa, 56127, Italy.
Abstract:
Terahertz spectroscopy is a perfect tool to investigate the electronic intraband conductivity of graphene, but a phenomenological model (Drude-Smith) is often needed to describe disorder. By studying the THz response of isotropically strained polycrystalline graphene and using a fully atomistic computational approach to fit the results, we demonstrate here the connection between the Drude-Smith parameters and the microscopic behavior. Importantly, we clearly show that the strain-induced changes in the conductivity originate mainly from the increased separation between the single-crystal grains, leading to enchanced localization of the plasmon excitations. Only at the lowest strain values explored, a behavior consistent with the deformation of the individual grains can instead be observed.

